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3 September 1992 AlGaSb/GaSb-based metal-semiconductor-metal and p-i-n photodetectors
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Proceedings Volume 1680, High-Speed Electronics and Optoelectronics; (1992) https://doi.org/10.1117/12.137713
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
GaSh-based meta1semiconductor-meta1 (MSM) and pi-n photodetectors grown by molecular beam epitaxy have been demonstrated for the first time. These novel devices can offer higher bandwidths and lower excess noise because of the superior hole transport properties of GaSb and the enhanced hole ionization rate of A1GaSb alloys. MSM photodetectors employing GaSb active region and AlGaSb barrier enhancing abrupt region are grown on InP substrates, while p4n photodiodes are grown on GaSb substrates. These MSM detectors exhibit photoresponse in the range of 0.2-0.65 AJW and a 3 dB bandwidth exceeding 1 GHz at 300 K and 10 GHz at 77 K. The dark currents of 106 A at 300 K and 1010 A at 77 K are measured for 25 x 25 devices. The p-i-n photodiodes have breakdown voltages as high as 20 V. The leakage currents of these devices are 60 i.i.A at half the breakdown voltage and 10 pA after nitrogen plasma passivation for 40 x 40 devices. To the best of our knowledge, these are the best results obtained from the structures grown by MBE.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuqi Wang, K. Longenbach, Malvin C. Teich, Wen I. Wang, Sandip Tiwari, and Marian C. Hargis "AlGaSb/GaSb-based metal-semiconductor-metal and p-i-n photodetectors", Proc. SPIE 1680, High-Speed Electronics and Optoelectronics, (3 September 1992); https://doi.org/10.1117/12.137713
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