3 September 1992 Effects of carrier transport on relative intensity noise and modulation response in quantum-well lasers
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Proceedings Volume 1680, High-Speed Electronics and Optoelectronics; (1992) https://doi.org/10.1117/12.137703
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
The maximum possible intrinsic modulation in semiconductor lasers is conventionally written in terms of the K factor. Although this is often sufficient in bulk lasers, it is usually not true in quantum well lasers where carrier transport can significantly affect the high speed properties. Here we present analytical expressions, which include the effects of carrier transport, for the modulation response and the relative intensity noise in quantum well lasers. We show that in the presence of significant transport effects, the K factor is not an accurate measure of the maximum possible intrinsic modulation bandwidth.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Radhakrishnan Nagarajan, Radhakrishnan Nagarajan, Masayuki Ishikawa, Masayuki Ishikawa, John Edward Bowers, John Edward Bowers, "Effects of carrier transport on relative intensity noise and modulation response in quantum-well lasers", Proc. SPIE 1680, High-Speed Electronics and Optoelectronics, (3 September 1992); doi: 10.1117/12.137703; https://doi.org/10.1117/12.137703
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