3 September 1992 Exploratory antimony containing heterojunction bipolar transistors
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Proceedings Volume 1680, High-Speed Electronics and Optoelectronics; (1992) https://doi.org/10.1117/12.137716
Event: Semiconductors '92, 1992, Somerset, NJ, United States
The advantages of using Sb containing III-V compounds in bipolar type devices are discussed with recent experimental results of two different applications of GaAsSb in Heterojunction Bipolar Transistors (HBTs). The performance of a prototype AlGaAs/GaAsSb/GaAs double HBT (DHBT) that exhibits a current gain of five and a maximum collector current density of 5 X 104 A/cm2 and a pnp AlGaAs/GaAs HBT with a superlattice GaAsSb emitter ohmic contact, with specific contact resistivity of 5 +/- 1 X 10-7 (Omega) -cm2 across the sample, are examined.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kiki Ikossi-Anastasiou, Kiki Ikossi-Anastasiou, } "Exploratory antimony containing heterojunction bipolar transistors", Proc. SPIE 1680, High-Speed Electronics and Optoelectronics, (3 September 1992); doi: 10.1117/12.137716; https://doi.org/10.1117/12.137716

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