3 September 1992 Low-temperature characterization of high-current-gain AlGaAs/GaAs narrow-base heterojunction bipolar transistor
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Proceedings Volume 1680, High-Speed Electronics and Optoelectronics; (1992) https://doi.org/10.1117/12.137715
Event: Semiconductors '92, 1992, Somerset, NJ, United States
AlGaAs/GaAs Narrow Base Heterojunction Bipolar Transistors (NBHBTs) with 50 angstroms thick bases exhibit maximum small signal common emitter current gains hfe of 1400 at 300 K and 3000 at 80 K. The performance of the device is attributed to the superlattice graded emitter contact and a novel planar base access fabrication process. Low temperature measurements indicate that the maximum current gain increases exponentially with decreasing temperature until is saturates around 200 K, suggesting a tunnelling limited current transport mechanism.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kiki Ikossi-Anastasiou, Kiki Ikossi-Anastasiou, Andris Ezis, Andris Ezis, Keith Evans, Keith Evans, Charles Ed Stutz, Charles Ed Stutz, } "Low-temperature characterization of high-current-gain AlGaAs/GaAs narrow-base heterojunction bipolar transistor", Proc. SPIE 1680, High-Speed Electronics and Optoelectronics, (3 September 1992); doi: 10.1117/12.137715; https://doi.org/10.1117/12.137715

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