3 September 1992 Optoelectronic applications of heterojunction bipolar transistor technology: promises and problems
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Proceedings Volume 1680, High-Speed Electronics and Optoelectronics; (1992) https://doi.org/10.1117/12.137714
Event: Semiconductors '92, 1992, Somerset, NJ, United States
Abstract
This is a review of general characteristics of Heterojunction Bipolar Transistors (HBTs) and the status of Optoelectronic Integrated Circuits (OEICs) with HBT-based electronics. We also analyze different approaches taken at the present for the monolithic integration.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Leda M. Lunardi, Leda M. Lunardi, Chandra S. Chandrasekhar, Chandra S. Chandrasekhar, } "Optoelectronic applications of heterojunction bipolar transistor technology: promises and problems", Proc. SPIE 1680, High-Speed Electronics and Optoelectronics, (3 September 1992); doi: 10.1117/12.137714; https://doi.org/10.1117/12.137714
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