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3 September 1992 Thin film transfer of InAlAs/InGaAs MSM photodetector or InGaAsP lasers onto GaAs or Si substrates
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Proceedings Volume 1680, High-Speed Electronics and Optoelectronics; (1992)
Event: Semiconductors '92, 1992, Somerset, NJ, United States
We have demonstrated the fabrication of two structures achieved by the thin ifim transfer technique: back4lluminated InAlAsfInGaAs metal. semiconducthr-metal (MSM) detectors with buried interdigitated fingers on GaAs substrates; and long wavelength InGaAsP lasers on GaAs or Si substrates. For optoelectromc system applications, one often considers the use of a single material system for both the optical and electronic components on the chip, because it is not complicated by lattice mismatch. Compared to epitaxial growth of latticemismatched material systems, such as GaAs on Si, the thin ifim transfer technique does not result in a substantial number of misfit dislocations which can adversely affect device performance. The results we obtained demonstrate the feasibility of the thin film transfer process and point to the potential integration of OEICs and other components fabricated from a variety of materials on a common host substrate.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Schwartz, S. Xin, Wen I. Wang, C. L. Shieh, Jim Y. Chi, Craig A. Armiento, Paul O. Haugsjaa, and Andrew J. Negri "Thin film transfer of InAlAs/InGaAs MSM photodetector or InGaAsP lasers onto GaAs or Si substrates", Proc. SPIE 1680, High-Speed Electronics and Optoelectronics, (3 September 1992);

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