14 August 1992 Infrared phase-modulated ellipsometer for in-situ characterization of surfaces and thin films
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Proceedings Volume 1681, Optically Based Methods for Process Analysis; (1992); doi: 10.1117/12.137728
Event: SPIE's 1992 Symposium on Process Control and Monitoring, 1992, Somerset, NJ, United States
Abstract
A new infrared phase modulated ellipsometer (IRPME) is presented here. The polarization phase modulation technique takes advantage of the high frequency modulation (37 kHz) provided by a ZnSe photoelastic modulator. In order to increase the signal to noise ratio, the conventional globar source was superseded by a cascade arc, which emitted intensity corresponds to that of a blackbody at a temperature > 10,000 K. Ellipsometric measurements can be recorded from 700 up to 4000 cm-1 combining photovoltaic InSb and MCT detectors. A monochromator is used to record spectra, with a 2 - 5 cm-1 spectral resolution, depending on the wavelength domain. The signal acquisition and data processing is based on the use of a numerical electronic system. The improvements of both optical and electronic parts of the ellipsometer result in increased performances by more than one order of magnitude. The precision on (Psi) and (Delta) is now approximately equals 0.01 deg., achieving a submonolayer sensitivity.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nadine Blayo, Bernard Drevillon, Razvigor Ossikovski, "Infrared phase-modulated ellipsometer for in-situ characterization of surfaces and thin films", Proc. SPIE 1681, Optically Based Methods for Process Analysis, (14 August 1992); doi: 10.1117/12.137728; https://doi.org/10.1117/12.137728
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KEYWORDS
Signal processing

Modulation

Sensors

Digital signal processing

Signal detection

Plasma

Thin films

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