12 August 1992 Cryoprober test development
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Abstract
Routine cryowafer probe testing of readout integrated circuits at T equals 80 K has been demonstrated at the Hughes Aircraft Company Technology Center. This new method of wafer testing at cryogenic temperatures has greatly reduced the test time needed to qualify infrared (IR) focal plane readout devices for subsequent hybridization to detectors. We have developed methods for handling sawn wafers during auto cryoprobe testing which have eliminated the need to package the devices into 68-pin leadless chip carriers. This reduced handling has improved yields and further decreased test times. In addition, we are upgrading our current cryowafer prober to test hybrid IR sensor chip assemblies (SCAs) at T equals 80 K by incorporation of cold shielding. We are also designing a new 10 K cryoprober which will extend our readout testing capability to low-background applications. This paper describes the 80 K cryowafer prober as well as the advanced 10 K cryoprober now in development and discusses the improved test flow enabled by the cryowafer prober compared to packaged-part dewar testing. Test data is presented showing the excellent correlation between packaged-part dewar testing and cryowafer testing.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bernard J. Isker, Bernard J. Isker, G. Sheffield, G. Sheffield, John Gonzales, John Gonzales, Rebecca A. Batterson, Rebecca A. Batterson, Glenn M. Kuse, Glenn M. Kuse, "Cryoprober test development", Proc. SPIE 1683, Infrared Focal Plane Array Producibility and Related Materials, (12 August 1992); doi: 10.1117/12.137775; https://doi.org/10.1117/12.137775
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