12 August 1992 Producibility of (Hg,Cd)Te by dipping liquid phase epitaxy
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Abstract
Liquid phase epitaxy(LPE) of (Hg,Cd)Te thick films from large tellurium-rich solutions was used to produce very large quantities of high quality films used for the fabrication of focal plane arrays. The composition uniformity is found to be ix=±O.OO1 for x=O.223 over an area ranging from 43cm2 to 54cm2. The reproducibility for 2OO growth runs, <8000cm2, is x=0.226±0.0033 or equivalently Xco9.8Si44Pm. The electrical quality of the material for diodes is evaluated by growing n-type films with an indium back-doping of —5x1014cm3. The carrier concentratio:ri is reproducible and in good agreement with the indium doping level. The average carrier concentration at 77K is 5.3±2.4x10'4cm3 with a mobility of 13 1±0.31x105cm2/V sec. Th.e minority carrier lifetime for the n-type films is Auger limited with an average value of 68±2.0isec.
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Luigi Colombo, Glenn H. Westphal, Pok-Kai K. Liao, M. C. Chen, Herbert F. Schaake, "Producibility of (Hg,Cd)Te by dipping liquid phase epitaxy", Proc. SPIE 1683, Infrared Focal Plane Array Producibility and Related Materials, (12 August 1992); doi: 10.1117/12.137777; https://doi.org/10.1117/12.137777
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