High-current sinking multiplexer for monolithic TIR imaging applications

Jan P. Vermeiren; Henk Vanderhaeghen; Cor L. Claeys; Marino Fabbricotti

doi:10.1117/12.60508

1 July 1992 High-current sinking multiplexer for monolithic TIR imaging applications

Jan P. Vermeiren, Henk Vanderhaeghen, Cor L. Claeys, Marino Fabbricotti

Proceedings Volume 1684, Infrared Readout Electronics; (1992) https://doi.org/10.1117/12.60508
Event: Aerospace Sensing, 1992, Orlando, FL, United States

Abstract

Attention is given to a bilinear current integrating and multiplexing circuit with 2 x 128 inputs for direct monolithic coupling with TIR PbSnSe photovoltaic sensors which was designed and manufactured in a modified CMOS technology. Due to the low RA product of the detectors, the input circuitry was designed to accumulate and handle large charge packets. Charge reduction techniques such as partition, skimming, and mainly internal oversampling are implemented. The bias voltage of the individual detectors can be adjusted by implementating the switched capacitor network, and by controlling and adjusting the gate voltage of the direct injection stage. In addition to the analog part, the multiplexer chip also contains the digital circuit for generating the readout sequence.

Citation Download Citation

Jan P. Vermeiren, Henk Vanderhaeghen, Cor L. Claeys, and Marino Fabbricotti "High-current sinking multiplexer for monolithic TIR imaging applications", Proc. SPIE 1684, Infrared Readout Electronics, (1 July 1992); https://doi.org/10.1117/12.60508

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