1 July 1992 Noise and current-voltage characterization of complementary heterojunction field-effect transistor structures below 8 K
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Abstract
Noise and current-voltage characterization of complementary heterojunction field-effect transistor (CHFET) structures below 8 K are presented. It is shown that the CHFET exhibits normal transistor operation down to 5K. Some of the details of the transistor operation, such as the gate-voltage dependence of the channel potential, are analyzed. The gate current is examined and is shown to be due to several mechanisms acting in parallel. These include field-emission and thermionic-field-emission, conduction through a temperature-activated resistance, and thermionic emission. The input referred noise for n-channel CHFETs is presented and discussed. The noise has the spectral dependence of 1/f noise, but does not exhibit the usual area dependence.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas J. Cunningham, Thomas J. Cunningham, Eric R. Fossum, Eric R. Fossum, Steven M. Baier, Steven M. Baier, } "Noise and current-voltage characterization of complementary heterojunction field-effect transistor structures below 8 K", Proc. SPIE 1684, Infrared Readout Electronics, (1 July 1992); doi: 10.1117/12.60498; https://doi.org/10.1117/12.60498
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