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1 September 1992 Auto-gain-control characteristics of InSb P+/N diode with high sheet resistance
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Abstract
During the photodiode manufacture process of Mg+ ion implantation on N type InSb, it has been found that the high sheet resistance caused by implantation damage affects current-voltage (I-V) characteristics of the photodiode and there are three segments appeared in the I-V curve. Photodiodes with such high sheet resistances have excellent Auto-Gain-Control (AGC) characteristics.The structure and working mechanism of this photodiode are analyzed and its equivalent model is established. Computer simulation is found to be in good correspondence with the I-V characteristics of the real photodiode.The Auto-Gain-Control characteri tics curves of the photodiodes, which have different high sheet resistances, are presented in this paper.The possible applications of such InSb photodiode in the field of infrared(IR) systems are also discussed.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yongping Ni "Auto-gain-control characteristics of InSb P+/N diode with high sheet resistance", Proc. SPIE 1685, Infrared Detectors and Focal Plane Arrays II, (1 September 1992); https://doi.org/10.1117/12.137811
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