1 September 1992 Dependence of Fermi level of Hg0.8Cd0.2Te on impurity concentration and temperature
Author Affiliations +
The relationship between the Fermi level of MCT and the impurity concentration and temperature was calculated with considering the special characteristics of nonparabolic bands of MCT material. And then an imitative formula which coincide very well with the values of log log plot of NDA versus T(m/m0) the curves for constant reduced Fermi level are partially straight lines only have been obtained. Key words: Fermi level, nonparabolic band, Burstein—Moss effect
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fei-Fei Wu, Fei-Fei Wu, Wenzhen Song, Wenzhen Song, De-chun Li, De-chun Li, Jingxuan Yan, Jingxuan Yan, Jiaxiong Fang, Jiaxiong Fang, Guosen Xu, Guosen Xu, } "Dependence of Fermi level of Hg0.8Cd0.2Te on impurity concentration and temperature", Proc. SPIE 1685, Infrared Detectors and Focal Plane Arrays II, (1 September 1992); doi: 10.1117/12.137805; https://doi.org/10.1117/12.137805

Back to Top