1 September 1992 p-channel MIS double-metal process InSb monolithic unit cell for infrared imaging
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Abstract
A new approach to the fabrication of monolithic infrared focal plane arrays is presented and examined in this paper. The array is based on photovoltaic diodes, parallel integration capacitors, and MIS field effect transistors (FET). The photodiode is connected directly to the integrating capacitor while the MISFET serves as a pass gate to the video line. This configuration is operated in the pseudo-staring mode. The array was implemented in InSb, in a process based on a new passivation in which a photo chemical oxidation of InSb is followed by a conventional photo chemical SiO2 growth. A two-level metallization process was developed serving both for electrical connection and optical coverage. Two configurations were tested for the layout of the two metal layers. In addition, the lower metallization was implemented in Cr, Ti, and Al. The optimal structure is a planar array with Cr as the first metal layer which forms the source and drain contacts.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Avishai Kepten, Avishai Kepten, Yosef Y. Shacham-Diamand, Yosef Y. Shacham-Diamand, S. E. Schacham, S. E. Schacham, "p-channel MIS double-metal process InSb monolithic unit cell for infrared imaging", Proc. SPIE 1685, Infrared Detectors and Focal Plane Arrays II, (1 September 1992); doi: 10.1117/12.137808; https://doi.org/10.1117/12.137808
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