2 December 1992 Effects of quantum-well design on the optical and microwave performance of strained-layer GaInAs/GaAs lasers
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Abstract
By introducing strain into semiconductor lasers using GaAs/Ga(1-x)In(x)As quantum wells, their modulation bandwidth has been increased to beyond 20 GHz. Our approach to high modulation bandwidth strained layer quantum well lasers has been to fabricate short cavity (less than l00-micron) multiple quantum well (MQW) structures. In order to fabricate lasers of this length, the facets must be etched by chemically assisted ion beam etching (CAIBE) rather than cleaving. In such short cavity MQW lasers fabricated by CAIBE using two different layer structures, a 3-dB modulation bandwidth of 28 GHz is obtainable under CW conditions. The current study investigates (1) the growth of different quantum well and barrier materials and their effects on device performance, (2) the dependence of differential gain and damping on quantum well width, depth, and number, and (3) the relationship between threshold current and high speed performance. Design criteria for optimizing high-speed performance are presented.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sean S. O'Keefe, Sean S. O'Keefe, Luke F. Lester, Luke F. Lester, D. Teng, D. Teng, William J. Schaff, William J. Schaff, Lester Fuess Eastman, Lester Fuess Eastman, "Effects of quantum-well design on the optical and microwave performance of strained-layer GaInAs/GaAs lasers", Proc. SPIE 1703, Optical Technology for Microwave Applications VI and Optoelectronic Signal Processing for Phased-Array Antennas III, (2 December 1992); doi: 10.1117/12.138396; https://doi.org/10.1117/12.138396
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