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2 December 1992 High-speed MSM photodetectors for millimeter waves
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This presentation deals with MSM photodetectors and post-detection amplifiers capable of responding at millimeter-wave frequencies. Monolithic integration, incorporating pseudomorphic MODFETs (SMODFETs) as the amplifiers, is used with coplanar waveguide resonant impedance transformers. Interdigitated Schottky barrier metal fingers, with submicron spacing and unique Bragg reflector layers to maximize light absorption, are used for the photodetector. For a 0.5-micron gap detector, a measurement shows a flat frequency response at least up to 40 GHz. Quantum efficiency is expected to be more than 60 percent for a 0.75 micron gap and 0.25 micron finger detector with 0.375 micron absorption layer.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kerry I. Litvin, Jinwook Burm, David W. Woodard, Pierre Mandeville, William J. Schaff, Mark M. Gitin, and Lester Fuess Eastman "High-speed MSM photodetectors for millimeter waves", Proc. SPIE 1703, Optical Technology for Microwave Applications VI and Optoelectronic Signal Processing for Phased-Array Antennas III, (2 December 1992);

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