2 December 1992 Linear AlGaAs/GaAs waveguide modulator at lambda = 1.32μm utilizing lateral mode interference
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Optical modulators based on electrooptically-induced lateral mode interference in multimode AlGaAs/GaAs waveguides at lambda = 1.32 micron are investigated for high-frequency linear applications. The key design issue is achieving higher slope efficiency while maintaining significant linearity improvements over sinusoidal interference-based modulator designs. We report experimental results which demonstrate indirectly a reduction in intermodulation distortion of 48 dB compared to an ideal Mach-Zehnder interferometer.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Charles T. Sullivan, Charles T. Sullivan, Sayan D. Mukherjee, Sayan D. Mukherjee, Edith Kalweit, Edith Kalweit, Terry Marta, Terry Marta, W. Tim Goldberg, W. Tim Goldberg, Mary K. Hibbs-Brenner, Mary K. Hibbs-Brenner, B. Walterson, B. Walterson, M. Nisa Khan, M. Nisa Khan, "Linear AlGaAs/GaAs waveguide modulator at lambda = 1.32μm utilizing lateral mode interference", Proc. SPIE 1703, Optical Technology for Microwave Applications VI and Optoelectronic Signal Processing for Phased-Array Antennas III, (2 December 1992); doi: 10.1117/12.138392; https://doi.org/10.1117/12.138392

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