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2 December 1992 Novel quantum-well optoelectronic switching device with stimulated emission
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A novel GaAs/GaAlAs quantum well optoelectronic switching device, which exhibits an s-type negative differential resistance at room temperature and emits high performance stimulated emission, was demonstrated. The device structure is similar to the conventional separate confinement heterojunction quantum well laser, and thus can be easily integrated with state-of-the-art optoelectronic integrated circuits. The devices can be switched optically and/or electrically. Threshold current densities of 1.2 kA/sq cm, differential quantum efficiencies as high as 67 percent (0.5 W/A slope efficiency per facet) and output power in excess of 50 mW per facet were obtained.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Szutsun Simon Ou, Jane J. Yang, and Michael Jansen "Novel quantum-well optoelectronic switching device with stimulated emission", Proc. SPIE 1703, Optical Technology for Microwave Applications VI and Optoelectronic Signal Processing for Phased-Array Antennas III, (2 December 1992);

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