2 December 1992 Optical cross-modulation method for investigating physical processes in semiconductors
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Abstract
The simultaneous effect o pulse-modulated microwave and optical infrared radiations on a laYer of crYstalline silicon Placed in a waveguide is investigated. The influence of these radiations through changing the mobility of free charge carriers and altering the concentration of photocarriers is studied, The experimental method for investigating the processes of photocarrier diffusion caused bY laser stimulation of microwave nonstationary absorption in a semiconductor is discussed. Processes which take Place in semiconductor under the influence of a strong impulse electromagnetic field are taken into consideration, for instance, laser infrared and microwave radiation mutual modulation, phYsical properties of a semiconductor dependance on temperature, the influence of electrical component of microwave radiation under conductivity of a semiconductor1. Besides these traditionally investigated processes, the spatial-nonuniform distribution of excessive charge carriers in a semiconductor is discussed. In recent Years high power levels of microwave radiation have been achieved using generators of various types including those on relativistic electron beams operating both in the impulse and continuous modes2. This paper Presents a studY of method of electromagnetic radiation diagnostic based on the jnteraction of powerful Pulse-modulated microwave and laser infrared radiations with a semiconductor.
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M. I. Akimov, M. I. Akimov, A. V. Kozar, A. V. Kozar, S. A. Krupenko, S. A. Krupenko, "Optical cross-modulation method for investigating physical processes in semiconductors", Proc. SPIE 1703, Optical Technology for Microwave Applications VI and Optoelectronic Signal Processing for Phased-Array Antennas III, (2 December 1992); doi: 10.1117/12.138388; https://doi.org/10.1117/12.138388
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