9 February 1993 High-resolution spatial uniformity of surface reflectance and response of silicon photodiodes
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Proceedings Volume 1712, 14th Symposium on Photonic Measurement; (1993) https://doi.org/10.1117/12.140163
Event: 14th Symposium of the TC2 on Photonic Measurements, 1992, Sopron, Hungary
Abstract
The spatial variations of surface reflectance and response of a number of silicon photodiodes has been measured at wavelengths between 325 nm and 633 nm using a measurement spot size (1/e2) of approximately 50 micrometers . The surface reflectances have been modelled using ellipsometrically determined SiO2 layer thicknesses and compared with spectrophotometric measurements. Also the reflectance variations across the diode surface have been correlated with the response variations to give a measured of the spatial internal quantum efficiency uniformity for each photodiode.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Antoine Bittar, Antoine Bittar, M. G. White, M. G. White, "High-resolution spatial uniformity of surface reflectance and response of silicon photodiodes", Proc. SPIE 1712, 14th Symposium on Photonic Measurement, (9 February 1993); doi: 10.1117/12.140163; https://doi.org/10.1117/12.140163
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