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9 February 1993 Measurements of thermal radiation induced by laser excitation of semiconductor structures
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Proceedings Volume 1712, 14th Symposium on Photonic Measurement; (1993) https://doi.org/10.1117/12.140173
Event: 14th Symposium of the TC2 on Photonic Measurements, 1992, Sopron, Hungary
Abstract
Kinetics and magnitude of integral flow of thermal radiation excited by laser beam in semiconductors and metal-semiconductor structures are measured. It is shown that such measurements allow one to control surface properties of a semiconductor, to determine a velocity of surface carriers recombination, to reveal near-surface macrodefects, to define the quality of metal-semiconductor interface, etc., and, in addition, to draw conclusions about the conditions and mechanisms for laser-stimulated processes of diffusion, defects creation, p-n junction formation, and other processes of laser modification of semiconductor structures.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergey V. Svechnikov, Leonid L. Fedorenko, E. B. Kaganovich, and V. A. Antonov "Measurements of thermal radiation induced by laser excitation of semiconductor structures", Proc. SPIE 1712, 14th Symposium on Photonic Measurement, (9 February 1993); https://doi.org/10.1117/12.140173
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