The hydride VPE technique was used to grow In(x)Ga(1-x)As/InAs(y)P(1-y) detectors optimized for 1.8 micron (x = 0.58, y = 0.08), 2.2 microns (x = 0.71, y = 0.36), and 2.6 microns (x = 0.82, y = 0.60) using several compositional grading techniques and several doping levels in the heteroepitaxial layers. Additionally, 1.7 micron In(0.53)Ga(0.47)As detectors were grown on GaAs and Si substrates to study the possibility of fabricating a monolithic linear InGaAs array. Single element detectors with 75 and 500 micron diameter, and 256 and 512 element detector arrays of (25 x 500) micron pixel sizes were fabricated. The best results include a room temperature leakage current of 500 pA at 10 mV back bias for a 2.2 micron cutoff, (25 x 500) micron array pixel. High reliability (12,000 hours at 125 C) has been observed for both In(x)Ga(1-x)As/InAs(y)P(1-y) and graded In(0.53)Ga(0.47)As detector structures grown on GaAs and Si substrates. The relationship between dislocation density, leakage current, and reliability is also discussed.