1 April 1992 Effect of bulk doping on the etching rate of silicon by halogen atoms
Author Affiliations +
Proceedings Volume 1723, LAMILADIS '91 Intl Workshop: Laser Microtechnology and Laser Diagnostics of Surfaces; (1992) https://doi.org/10.1117/12.58630
Event: LAMILADIS '91: International Workshop: Laser Microtechnology and Laser Diagnostics of Surfaces, 1991, Chernivsti, Ukraine
Abstract
The concept of field-assisted etching is developed. Numerical solution is obtained for the equilibrium flux of negative halogen ions through a thin (h ≤ 10 Å) buffer layer of reaction onto the surface of silicon of various bulk dopings. Results of the numerical simulation are compared with the experimental data.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrey I. Krechetov, Andrey I. Krechetov, "Effect of bulk doping on the etching rate of silicon by halogen atoms", Proc. SPIE 1723, LAMILADIS '91 Intl Workshop: Laser Microtechnology and Laser Diagnostics of Surfaces, (1 April 1992); doi: 10.1117/12.58630; https://doi.org/10.1117/12.58630
PROCEEDINGS
7 PAGES


SHARE
Back to Top