1 April 1992 Far-infrared SEW spectroscopy of semiconductors and dielectrics
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Proceedings Volume 1723, LAMILADIS '91 Intl Workshop: Laser Microtechnology and Laser Diagnostics of Surfaces; (1992) https://doi.org/10.1117/12.58655
Event: LAMILADIS '91: International Workshop: Laser Microtechnology and Laser Diagnostics of Surfaces, 1991, Chernivsti, Ukraine
Abstract
Experimental results of FIR ((nu) equals 85 - 142 cm-1) surface electromagnetic wave propagation in n-type semiconductors (InSb, GBaAs, InP) and ferroelectric films BaxSr1-xTiO3 are presented. A technique for measuring the plasma frequency (nu) p and the damping constant of plasmons (gamma) (or the concentration and relaxation time of electrons) in doped semiconductors was designed. The SEW propagation distance dependence on electron concentration in GaAs has been obtained. The relationship between the SEW propagation distance L and the 'soft mode' parameters in ferroelectric films was found. In the L dependence on temperature the minimum was observed at T equals 380 K in BaxSr1-xTiO3, which is explained by the increase of dielectric losses tan (delta) in the film under phase transition.
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Viktoras V. Vaicikauskas, Viktoras V. Vaicikauskas, } "Far-infrared SEW spectroscopy of semiconductors and dielectrics", Proc. SPIE 1723, LAMILADIS '91 Intl Workshop: Laser Microtechnology and Laser Diagnostics of Surfaces, (1 April 1992); doi: 10.1117/12.58655; https://doi.org/10.1117/12.58655
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