Development of lead chalcogenide tunable diode lasers for 3- to 40-um spectral region at Lebedev Physical Institute

A. P. Shotov

doi:10.1117/12.140315

1 April 1992 Development of lead-chalcogenide tunable diode lasers for 3 to 40 μm spectral region at Lebedev Physical Institute

A. P. Shotov

Author Affiliations +

Proceedings Volume 1724, Tunable Diode Laser Applications; (1992) https://doi.org/10.1117/12.140315
Event: Tunable Diode Laser Applications, 1993, Moscow, Russian Federation

Abstract

The current status of the lead salt diode lasers developed at Lebedev Physical Institute is described. Diffused lasers, LPE lattice-matched PbSnSeTe lasers, PbSSe diode lasers with controlled carrier concentration, and PbS/PbSSes/PbSnSe heterostructure lasers with a quantum-well active region are discussed. The lasers have improved performance due to their superior electrical and optical confinement.

Citation Download Citation

A. P. Shotov "Development of lead-chalcogenide tunable diode lasers for 3 to 40 μm spectral region at Lebedev Physical Institute", Proc. SPIE 1724, Tunable Diode Laser Applications, (1 April 1992); https://doi.org/10.1117/12.140315

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