1 April 1992 Spectral characteristics of quantum-well heterolasers
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Proceedings Volume 1724, Tunable Diode Laser Applications; (1992) https://doi.org/10.1117/12.140318
Event: Tunable Diode Laser Applications, 1993, Moscow, Russian Federation
Abstract
The stimulated emission frequencies of laser QW heterostructures are analyzed here as a function of the size and composition of the active region and wide bandgap emitters, the excitation level, and the spectral characteristics of low-dimensional systems with varying thickness of QW layers. The simultaneous lasing conditions at two remote frequencies are determined for varying widths of the reactive region. In a GaAs-AlGaAs system with layer thickness of 50 and 100 A, the wavelength shift can attain 170-250 A.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Valerii K. Kononenko, Valerii K. Kononenko, B.I. Stepanov, B.I. Stepanov, } "Spectral characteristics of quantum-well heterolasers", Proc. SPIE 1724, Tunable Diode Laser Applications, (1 April 1992); doi: 10.1117/12.140318; https://doi.org/10.1117/12.140318
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