28 October 1992 Quantum optics at vapor-dielectric interfaces
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Proceedings Volume 1726, 1992 Shanghai International Symposium on Quantum Optics; (1992) https://doi.org/10.1117/12.140326
Event: 1992 Shanghai International Symposium on Quantum Optics, 1992, Shanghai, China
The atomic response to resonant light irradiation near vapor-dielectric interfaces is monitored via high-resolution reflection spectroscopy. One demonstrates that this Doppler-free spectroscopic technique yields a novel probe of atomic dynamics and QED atom-surface long- range interaction. It provides for the first time a spectral evidence of van der Waals attraction, and the method is intrinsically applicable to the observation of surface interaction exerted on excited atoms. Effects related with atomic excitation level, nature of the dielectrics, and atomic collisions are discussed.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Chevrollier, M. Chevrollier, M. Fichet, M. Fichet, M. Oria, M. Oria, D. Bloch, D. Bloch, Martial Ducloy, Martial Ducloy, } "Quantum optics at vapor-dielectric interfaces", Proc. SPIE 1726, 1992 Shanghai International Symposium on Quantum Optics, (28 October 1992); doi: 10.1117/12.140326; https://doi.org/10.1117/12.140326

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