25 November 1992 Optical and electrical properties of doped rf-sputtered SnOx films
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Abstract
SnOx films doped with Sb and/or F were made by reactive rf magnetron sputtering of Sn and Sn/Sb alloys in Ar+O2(+CF4) onto glass. Electrical dc resistivity, mobility, free electron concentration, spectral optical properties, and structural properties were investigated as a function of sputtering parameters. Optimized deposition parameters gave SnOx:(Sb,F) films with high luminous transmittance, low luminous absorptance, high IR reflectance and dc resistivity down to 9.1 (DOT)10-4 (Omega) cm. X- ray diffraction investigations showed that the sputtered SnOx films had a preferred direction of growth, dependent on the oxygen amount as well as specific kind of doping. The optical and electrical properties were quantitatively calculated from theories embodying ionized impurity scattering and Drude free-electron theory and compared to experimental measurements.
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B. A. Stjerna, B. A. Stjerna, Claes-Goeran Granqvist, Claes-Goeran Granqvist, } "Optical and electrical properties of doped rf-sputtered SnOx films", Proc. SPIE 1727, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XI: Selective Materials, Concentrators and Reflectors, Transparent Insulation and Superwindows, (25 November 1992); doi: 10.1117/12.130505; https://doi.org/10.1117/12.130505
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