25 November 1992 Electroreflectance and photoresponse of NiOx thin films
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Proceedings Volume 1728, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XI: Chromogenics for Smart Windows; (1992) https://doi.org/10.1117/12.130547
Event: Optical Materials Technology for Energy Efficiency and Solar Energy, 1992, Toulouse-Labege, France
Abstract
Thin films of nickel oxide obtained by reactive sputtering and deposited either at room temperature or at 250 degree(s)C presented electrochromic properties in basic aqueous electrolytes. The structure of the films is characteristic of a polycrystalline material with preferential orientation, by which it was possible to follow the changes in lattice parameters with electrochemical intercalation, growth temperature, and annealing processes. Photocurrent and electroreflectance measurements were performed in order to detect the variations in the band gap energy and in the electronic transitions as a function of the electrochromic state. The results are consistent with the presence of impurity levels due to nickel vacancies. The extracted values of the band gap energies increased for the clearer states, followed by a decrease in the carrier's recombination rates.
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Marcia C.A. Fantini, Marcia C.A. Fantini, Annette Gorenstein, Annette Gorenstein, Wu-Mian Shen, Wu-Mian Shen, Micha Tomkiewicz, Micha Tomkiewicz, } "Electroreflectance and photoresponse of NiOx thin films", Proc. SPIE 1728, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XI: Chromogenics for Smart Windows, (25 November 1992); doi: 10.1117/12.130547; https://doi.org/10.1117/12.130547
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