Characterization and surface modification of CuGaSe2 thin films by photoelectrochemical methods

John F. Kessler; R. Klenk; F. Grunwald; Hans Werner Schock

doi:10.1117/12.130572

9 December 1992 Characterization and surface modification of CuGaSe₂ thin films by photoelectrochemical methods

John F. Kessler, R. Klenk, F. Grunwald, Hans Werner Schock

Proceedings Volume 1729, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XI: Photovoltaics, Photochemistry, Photoelectrochemistry; (1992) https://doi.org/10.1117/12.130572
Event: Optical Materials Technology for Energy Efficiency and Solar Energy, 1992, Toulouse-Labege, France

Abstract

Acidic aqueous electrolyte/semiconductor contacts have been used to measure basic material properties of thin film polycrystalline CuGaSe₂ and to modify its composition (growth of a Zn containing interface layer or removal of excess Cu₂Se). Although simple models are applied to a complex situation for the characterization, the comparison of different techniques (capacitance and photocurrent collection) and trends versus film composition can enlighten our view of the properties of the semiconducting films. Interfacial chemical modifications, with excellent control, can be performed with this kind of approach and represent an alternative to pure chemical bath deposition for the buffer layers involved in the CuGaSe₂/Buffer/ZnO devices, as well as an alternative to the cyanide etching of the undesirable Cu₂Se from the Cu-rich CuGaSe₂ films, that posses otherwise high quality properties. A first feedback onto solid state devices is investigated and results can be considered as promising.

Citation Download Citation

John F. Kessler, R. Klenk, F. Grunwald, and Hans Werner Schock "Characterization and surface modification of CuGaSe₂ thin films by photoelectrochemical methods", Proc. SPIE 1729, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XI: Photovoltaics, Photochemistry, Photoelectrochemistry, (9 December 1992); https://doi.org/10.1117/12.130572

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