9 December 1992 Effect of sulfur partial pressure on the growth of CuInS2 single crystals
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Abstract
CuInS2 single crystaLs of moderate size have been produced by the gradient freeze technique under different sulfur pressures. Results from EDX show that with higher sulfur pressures the cracking along the ingot decreases, but at 2 bar these cracks are still present. XRD shows that CuS is present at these cracks and is due to the loss of In2S into the gas phase. Despite this loss of In2S PL reveals the material to be In-rich.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Kanis, M. Kanis, M. L. Fearheiley, M. L. Fearheiley, K. Diesner, K. Diesner, Sebastian Fiechter, Sebastian Fiechter, B. Hermoneit, B. Hermoneit, Siegfried Gramlich, Siegfried Gramlich, I. Rechenberg, I. Rechenberg, } "Effect of sulfur partial pressure on the growth of CuInS2 single crystals", Proc. SPIE 1729, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XI: Photovoltaics, Photochemistry, Photoelectrochemistry, (9 December 1992); doi: 10.1117/12.130561; https://doi.org/10.1117/12.130561
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