Sensitization of titanium dioxide and niobium pentoxide electrodes by strongly quantized semiconductor particles

Ralf Vogel; Horst Weller

doi:10.1117/12.130575

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9 December 1992 Sensitization of titanium dioxide and niobium pentoxide electrodes by strongly quantized semiconductor particles

Ralf Vogel, Horst Weller

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Proceedings Volume 1729, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XI: Photovoltaics, Photochemistry, Photoelectrochemistry; (1992) https://doi.org/10.1117/12.130575
Event: Optical Materials Technology for Energy Efficiency and Solar Energy, 1992, Toulouse-Labege, France

Abstract

Porous, polycristalline TiO₂ and Nb₂O₅ photoelectrodes were prepared by a sol- gel process. Small CdS and PbS particles were then deposited onto the electrodes by a wet- chemical method. The particles had diameters of a few nm and showed strong quantization effects. Photoelectrochemical measurements showed a very efficient sensitization of the oxide substrates by the semiconductor particles. The investigation showed that electrons were injected from the conduction band of the photoexcited semiconductor particles.

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Ralf Vogel and Horst Weller "Sensitization of titanium dioxide and niobium pentoxide electrodes by strongly quantized semiconductor particles", Proc. SPIE 1729, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XI: Photovoltaics, Photochemistry, Photoelectrochemistry, (9 December 1992); https://doi.org/10.1117/12.130575

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