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22 December 1992 InI photodetectors for scintillation spectroscopy
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Abstract
Photoconductive detectors have been developed from a new wide bandgap (Eg equals 2.01 eV) semiconductor, InI, and these photodetectors are intended for use in scintillation spectroscopy of nuclear radiation. InI single crystals were produced using the Bridgman process and these crystals were characterized by measuring their optical transmission spectrum, micro-hardness, electrical resistivity, and charge transport properties. Photodetectors were fabricated from InI crystal slices by evaporating thin (< 100 angstrom) Pd front contacts, and applying graphite back contacts. These photodetectors showed considerable promise due to their high quantum efficiency (> 60%) in the 300 nm to 600 nm wavelength region and their uniform photo-response over the active detector area. Finally, these photodetectors were coupled to CsI(Tl) scintillator and were successfully tested as spectrometers at room temperature by irradiating the scintillator with 5.5 MeV (alpha) particles (241Am source) and 662 keV (gamma) rays (137Cs source).
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kanai S. Shah, Larry P. Moy, John Zhang, S. Medrick, Fred Olschner, and Michael R. Squillante "InI photodetectors for scintillation spectroscopy", Proc. SPIE 1734, Gamma-Ray Detectors, (22 December 1992); https://doi.org/10.1117/12.138585
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