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22 December 1992 Recent developments in CdZnTe gamma-ray detector technology
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Abstract
A discussion of recent results in the preparation of Cd1-xZnxTe crystals by a high pressure Bridgman (HPB) method and use of the crystals for gamma- and x-ray detectors is presented. Resistivities in excess of 1011 ohm-cm are achieved in Cd1-xZnxTe without impurity doping. The consequential low detector leakage currents lead to excellent energy resolution, 8.4% (FWHM) at 30 keV, for example. Useful energy spectroscopy can be performed at temperatures up to 100 degree(s)C. The dependence of leakage current on temperature from -40 degree(s)C to 100 degree(s)C implies a Fermi level at mid-gap for x equals 0.2. HPB grown Cd1-xZnxTe crystals exhibit relatively low defect content, as evidenced by etch-pit-densities <EQ 104 cm-2, double-crystal-rocking-curve linewidths of 10 - 15 arc-seconds and sharp, bright emission lines, with excitonic features, in low temperature photoluminescence measurements. Results of flash x ray experiments indicate high current sensitivity, low leakage current, and good temporal response. Preliminary results of Cd1-xZnxTe imaging detector array studies are discussed.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jack F. Butler, F. Patrick Doty, and Clinton L. Lingren "Recent developments in CdZnTe gamma-ray detector technology", Proc. SPIE 1734, Gamma-Ray Detectors, (22 December 1992); https://doi.org/10.1117/12.138580
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