PROCEEDINGS VOLUME 1735
SAN DIEGO '92 | 22-22 JULY 1992
Infrared Detectors: State of the Art
Editor(s): Wagih H. Makky
IN THIS VOLUME

4 Sessions, 30 Papers, 0 Presentations
SAN DIEGO '92
22-22 July 1992
San Diego, CA, United States
Innovative Devices and Technologies I
Proc. SPIE 1735, Assessment of HgCdTe and GaAs/GaAlAs technologies for LWIR infrared imagers, 0000 (10 December 1992); https://doi.org/10.1117/12.142561
Proc. SPIE 1735, Uncooled thermal imaging at Texas Instruments, 0000 (10 December 1992); https://doi.org/10.1117/12.138624
Proc. SPIE 1735, Recent improvements of IRFPAs at LIR, 0000 (10 December 1992); https://doi.org/10.1117/12.138634
Proc. SPIE 1735, Selective IR photodetectors using surface plasmon resonance, 0000 (10 December 1992); https://doi.org/10.1117/12.138638
Proc. SPIE 1735, Intersubband transitions and IR hot-electron transistors, 0000 (10 December 1992); https://doi.org/10.1117/12.138639
Proc. SPIE 1735, Monolithic lead-chalcogenide IR-diode arrays on silicon: fabrication and use in thermal imaging applications, 0000 (10 December 1992); https://doi.org/10.1117/12.138640
Proc. SPIE 1735, SOFRADIR IRFPA technology, 0000 (10 December 1992); https://doi.org/10.1117/12.138641
Proc. SPIE 1735, Consideration of a new two-color infrared detector on the basis of Two Peak Effect, 0000 (10 December 1992); https://doi.org/10.1117/12.138642
HgCdTe-Based Infrared Detectors
Proc. SPIE 1735, Recent developments in MOCVD of Hg1-xCdxTe, 0000 (10 December 1992); https://doi.org/10.1117/12.138643
Proc. SPIE 1735, Investigation of surface-related electrical crosstalk in Hg1-xCdxTe photodiode arrays, 0000 (10 December 1992); https://doi.org/10.1117/12.138615
Proc. SPIE 1735, State of the art of Hg-melt LPE HgCdTe at Santa Barbara Research Center, 0000 (10 December 1992); https://doi.org/10.1117/12.138616
Proc. SPIE 1735, Study of effect of surface fixed positive charges on HgCdTe photoconductive detectors, 0000 (10 December 1992); https://doi.org/10.1117/12.138617
Proc. SPIE 1735, Current status of the growth of HgCdTe by molecular beam epitaxy on (211)B CdZnTe substrates, 0000 (10 December 1992); https://doi.org/10.1117/12.138618
Proc. SPIE 1735, Second-generation FPAs with MCT sensor arrays in hybrid approach, 0000 (10 December 1992); https://doi.org/10.1117/12.138619
Quantum Wells
Proc. SPIE 1735, Pseudomorphic p-GexSi1-x/Si quantum-well infrared photodetectors for normal incidence operation between 20K and 77K, 0000 (10 December 1992); https://doi.org/10.1117/12.138621
Proc. SPIE 1735, Si-based quantum-well intersubband detectors, 0000 (10 December 1992); https://doi.org/10.1117/12.138622
Proc. SPIE 1735, Infrared imaging using a 128x128-pixel array of GaAs/AlxGa1-xAs quantum-well infrared photodetectors, 0000 (10 December 1992); https://doi.org/10.1117/12.138623
Proc. SPIE 1735, GaAs/AlGaAs multi-quantum-well far-infrared photodetectors grown by the MOVPE process, 0000 (10 December 1992); https://doi.org/10.1117/12.138625
Proc. SPIE 1735, GaAs quantum-well infrared detectors grown on 3-inch GaAs and silicon substrates, 0000 (10 December 1992); https://doi.org/10.1117/12.138626
Proc. SPIE 1735, Increased responsivity and detectivity in asymmetric quantum-well infrared detectors, 0000 (10 December 1992); https://doi.org/10.1117/12.138627
Innovative Devices and Technologies II
Proc. SPIE 1735, Surface plasmons on PtSi for visible and infrared Schottky-barrier-enhanced detection, 0000 (10 December 1992); https://doi.org/10.1117/12.138628
Proc. SPIE 1735, Infrared internal emission detectors, 0000 (10 December 1992); https://doi.org/10.1117/12.138629
Proc. SPIE 1735, Nonlinear behavior of photovoltage in Al/n-Si Schottky-barrier detector under IR laser radiation, 0000 (10 December 1992); https://doi.org/10.1117/12.138630
Proc. SPIE 1735, Optically controlled MIS-like InP-based FETs for photodetection and switching, 0000 (10 December 1992); https://doi.org/10.1117/12.138631
Proc. SPIE 1735, Monolithic focal-plane cell in InSb, 0000 (10 December 1992); https://doi.org/10.1117/12.138632
Proc. SPIE 1735, 512- and 1024-element linear InGaAs detector arrays for near-infrared (1-3um) environmental sensing, 0000 (10 December 1992); https://doi.org/10.1117/12.138633
Quantum Wells
Proc. SPIE 1735, Comparison of GaAs/AlGaAs quantum-well IR detectors fabricated on GaAs and Si substrates, 0000 (10 December 1992); https://doi.org/10.1117/12.138635
Innovative Devices and Technologies I
Proc. SPIE 1735, Method for optimizing the design of photodetector circuitry, 0000 (10 December 1992); https://doi.org/10.1117/12.138636
Innovative Devices and Technologies II
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