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10 December 1992 640 x 480 Pace HgCdTe FPA
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Abstract
A hybrid HgCdTe 640 X 480 infrared (IR) focal plane array (FPA) that meets the sensitivity, resolution, and field-of-view requirements of high-performance medium wavelength infrared (MWIR) imaging systems has been developed. The key technology making this large, high sensitivity device producible is the epitaxial growth of HgCdTe on a CdTe-buffered, sapphire substrate (referred to as PACE, for Producible Alternative to CdTe for Epitaxy; PACE-I refers to sapphire). The device offers TV resolution with excellent sensitivity at temperatures below 120 K. Mean NE(Delta) T as low as 13 mK has been achieved at operating temperatures < 130 K, which is about an order of magnitude better than has been achieved with PtSi 640 X 480 FPAs. In addition, the latter require cooling to <EQ 77 K. Mean PACE-I FPA D* at 78 K and background of 1014 photons/cm2-sec is BLIP-limited at 1 X 1012 cm-Hz1/2/W for the typical mean quantum efficiency of 60 - 70%. Imagery having excellent quality has been obtained using simple two-point nonuniformity compensation.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lester J. Kozlowski, Robert B. Bailey, Scott A. Cabelli, Donald E. Cooper, Gail D. McComas, Kadri Vural, and William E. Tennant "640 x 480 Pace HgCdTe FPA", Proc. SPIE 1735, Infrared Detectors: State of the Art, (10 December 1992); https://doi.org/10.1117/12.138620
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