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10 December 1992 Current status of the growth of HgCdTe by molecular beam epitaxy on (211)B CdZnTe substrates
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Abstract
We discuss the influence of the Hg flux on defect formation and we show that under optimized growth parameters the crystal quality of HgCdTe epilayer is similar to that of the CdZnTe substrate. We confirm the MBE growth of HgCdTe requires stringent control in growth conditions and occurs under Te saturated conditions. We show also that diffusion of impurities originating from the substrates is a very serious problem. Indium doped HgCdTe layers have been found to exhibit excellent structural and electrical characteristics.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jean-Pierre Faurie, Sivalingam Sivananthan, and Priyalal S. Wijewarnasuriya "Current status of the growth of HgCdTe by molecular beam epitaxy on (211)B CdZnTe substrates", Proc. SPIE 1735, Infrared Detectors: State of the Art, (10 December 1992); https://doi.org/10.1117/12.138618
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