10 December 1992 GaAs/AlGaAs multi-quantum-well far-infrared photodetectors grown by the MOVPE process
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Abstract
We demonstrate that GaAs/AlGaAs multiple-quantum-well (MQW) structures grown by atmospheric pressure metalorganic vapor phase epitaxy have state-of-the-art structural, optical, and electrical properties. The 50-well MQW structures, with well thicknesses ranging from 14 to 90 angstroms, were analyzed by atomic resolution transmission electron microscopy, photoluminescence, and deep-level transient spectroscopy with the aid of a theoretical model for the eigenstates of the MQWs. It is shown that the MQW structures have a layer-to-layer thickness uniformity, interface roughness, and heterojunction abruptness of only one monolayer. A selectively doped MQW structure shows an infrared absorption efficiency of 15% at a wavelength of 11 micrometers .
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Erwang Mao, Zhenghao Lu, Byoung-Whi Kim, Tamsin McCormick, Eung-gie Oh, Arnoldo Majerfeld, Kwong-Kit Choi, Kenneth A. Jones, "GaAs/AlGaAs multi-quantum-well far-infrared photodetectors grown by the MOVPE process", Proc. SPIE 1735, Infrared Detectors: State of the Art, (10 December 1992); doi: 10.1117/12.138625; https://doi.org/10.1117/12.138625
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