10 December 1992 GaAs quantum-well infrared detectors grown on 3-inch GaAs and silicon substrates
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Abstract
This paper presents the preliminary analysis of quantum-well IR detectors grown on both GaAs and Si substrates.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Deepak K. Sengupta, Deepak K. Sengupta, Timothy U. Horton, Timothy U. Horton, Peter J. Apostolakis, Peter J. Apostolakis, Cynthia A. Rowe, Cynthia A. Rowe, Peter Mares, Peter Mares, Milton Feng, Milton Feng, Gregory E. Stillman, Gregory E. Stillman, M. Dodd, M. Dodd, S. Lance Cooper, S. Lance Cooper, Wen I. Wang, Wen I. Wang, } "GaAs quantum-well infrared detectors grown on 3-inch GaAs and silicon substrates", Proc. SPIE 1735, Infrared Detectors: State of the Art, (10 December 1992); doi: 10.1117/12.138626; https://doi.org/10.1117/12.138626
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