10 December 1992 Infrared imaging using a 128 x 128 pixel array of GaAs/AlxGa1-xAs quantum-well infrared photodetectors
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Abstract
An AlxGa1-xAs/GaAs quantum well infrared photodetector (QWIP) 128 X 128 focal plane array, incorporating integral grating structures for efficient optical coupling have been hybridized to silicon CMOS multiplexes. The demonstrated high uniformity, excellent detectivity, and high yield of operating pixels (99% plus) has resulted in excellent imagery in the 8 - 12 micrometers range, with a low noise equivalent temperature difference (NE(Delta) T) of less than 10 mK, and high image contrast signal to noise ratios (CSNR). We will discuss the figures of merit that govern the image quality in our QWIP focal plane arrays, such as D*, uniformity, CSNR, maximum input charge to the CMOS multiplex, etc. Our latest results will also be reported.
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Clyde G. Bethea, Clyde G. Bethea, Barry F. Levine, Barry F. Levine, } "Infrared imaging using a 128 x 128 pixel array of GaAs/AlxGa1-xAs quantum-well infrared photodetectors", Proc. SPIE 1735, Infrared Detectors: State of the Art, (10 December 1992); doi: 10.1117/12.138623; https://doi.org/10.1117/12.138623
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