10 December 1992 Infrared internal emission detectors
Author Affiliations +
This paper will review the current state of the art of internal photoemission infrared detectors. That is, detectors which sense in a multi-step process, beginning with photon absorption in an electrode and terminating in emission of an excited carrier over a potential barrier into a semiconductor depletion region. Internal photoemission (PE) is a surface barrier sensing process similar to vacuum photoemission. This differs from competing bulk detection processes where both photoabsorption and carrier measurement takes place in the semiconductor. The PtSi/p-Si Schottky photodiode is the most advanced and best documented infrared PE device. Our interest is more general however and we will include devices where the photoemission 'electrode' may be a metal, a metal silicide or a degenerate semiconductor.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Freeman D. Shepherd, Freeman D. Shepherd, } "Infrared internal emission detectors", Proc. SPIE 1735, Infrared Detectors: State of the Art, (10 December 1992); doi: 10.1117/12.138629; https://doi.org/10.1117/12.138629


Improved 512 x 512 IRCSD with large fill factor and...
Proceedings of SPIE (August 31 1992)
High Dynamic Range Infrared Detectors
Proceedings of SPIE (November 17 1989)
Schottky Diode Based Infrared Sensors
Proceedings of SPIE (December 08 1983)
Response Irregularities In Extrinsic Silicon Detectors
Proceedings of SPIE (December 22 1980)
Infrared image sensor status
Proceedings of SPIE (October 06 1994)

Back to Top