10 December 1992 Monolithic focal-plane cell in InSb
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Abstract
A monolithic infrared focal plane array where photo-diodes and field effect transistors are integrated is presented. The photodiode is connected directly to the integrating capacitor while the transistor controls the integrated signal-charge transfer to the video line. The operating modes of such array are discussed and especially the pseudo-staring mode. Such arrays were produced and their system performance were investigated. The detectors average specific detectivity D*(lambda )(f/no equals 1, (lambda) equals 3.83 micrometers ) was equal to 1.3 X 1011 [cm-Hz1/2/W] and was used to calculate the Noise Equivalent Temperature Difference (NETD) as a function of the number of detectors and vectors. The NETD was estimated to be of 0.039 K for an optimal 5 vectors array.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Avishai Kepten, Avishai Kepten, Yosef Y. Shacham-Diamand, Yosef Y. Shacham-Diamand, S. E. Schacham, S. E. Schacham, } "Monolithic focal-plane cell in InSb", Proc. SPIE 1735, Infrared Detectors: State of the Art, (10 December 1992); doi: 10.1117/12.138632; https://doi.org/10.1117/12.138632
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