10 December 1992 Monolithic lead-chalcogenide IR-diode arrays on silicon: fabrication and use in thermal imaging applications
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Abstract
A narrow gap semiconductor layer grown directly on a Si-substrate is the preferable approach to realize large IR-focal plane arrays. We report on our new work on lead chalcogenide photovoltaic IR-detector arrays, grown monolithically on Si (111) substrates using a stacked CaF2/BaF2 buffer layer. The sensor fabrication process is described, and a simple thermal camera system is used to verify the functionality of our arrays. An epitaxial narrow gap lead chalcogenide layer of only 3 micrometers thickness is grown on an 0.3 micrometers thick CaF2/BaF2 buffer layer on Si (111), both using Molecular Beam Epitaxy. Photovoltaic IR-detectors are formed by deposition of a blocking Pb contact on the p-type semiconducting surface. We fabricated staggered linear sensor arrays with up to 2 X 128 pixels and with the cut off ranging from 3 to 12 micrometers . For demonstration, we built up a simple thermal camera using our detector arrays as the IR sensitive element. The read out is done using a new multiplexed direct injection device, capable to store large charge packages and offering individual biasing for each diode. The IR-diodes are fabricated monolithically on the completely finished readout chip.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jiri Masek, Jiri Masek, Taizo J. Hoshino, Taizo J. Hoshino, Clau Maissen, Clau Maissen, Hans Zogg, Hans Zogg, Stefan Blunier, Stefan Blunier, Jan P. Vermeiren, Jan P. Vermeiren, Cor L. Claeys, Cor L. Claeys, } "Monolithic lead-chalcogenide IR-diode arrays on silicon: fabrication and use in thermal imaging applications", Proc. SPIE 1735, Infrared Detectors: State of the Art, (10 December 1992); doi: 10.1117/12.138640; https://doi.org/10.1117/12.138640
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