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10 December 1992 Nonlinear behavior of photovoltage in Al/n-Si Schottky-barrier detector under IR laser radiation
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Abstract
The results of experimental investigations of the photovoltage generated in Schottky barrier under CO2 laser radiation are presented. We demonstrate for the first time the nonlinear dependence of photovoltage on the incident power density. This dependence indicates the multi-photon light absorption in the semiconductor-metal interface.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Steponas P. Asmontas, Dalius Seliuta, and Edmundas Sirmulis "Nonlinear behavior of photovoltage in Al/n-Si Schottky-barrier detector under IR laser radiation", Proc. SPIE 1735, Infrared Detectors: State of the Art, (10 December 1992); https://doi.org/10.1117/12.138630
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