10 December 1992 Optically controlled MIS-like InP-based FETs for photodetection and switching
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Field-effect transistors based on InP have many advantages over those based on GaAs. The major difficulty in realizing MESFETs based on InP, however, lies in low barrier height and breakdown voltage of Schottky gate. To overcome this, a pseudomorphic insulating layer instead of a conventional insulator on gate for a MIS-like FET structure is proposed in this paper. The computed I-V characteristics for such a structure having semitransparent gate metallization under dark and optically illuminated gate conditions are presented.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. L. Sharma, B. L. Sharma, M. B. Dutt, M. B. Dutt, } "Optically controlled MIS-like InP-based FETs for photodetection and switching", Proc. SPIE 1735, Infrared Detectors: State of the Art, (10 December 1992); doi: 10.1117/12.138631; https://doi.org/10.1117/12.138631


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