Translator Disclaimer
10 December 1992 Recent developments in MOCVD of Hg1-xCdxTe
Author Affiliations +
Abstract
Recent developments in metal-organic chemical vapor deposition (MOCVD) growth of the infrared detector material Hg1-xCdxTe can be subdivided into three main areas: reaction kinetics, in situ monitoring of growth and doping. The growth regime for most laboratories is kinetic/catalytic, and a good understanding of these growth mechanisms is essential for adequate control of growth rate and composition. In situ monitoring using laser reflectance can measure growth rate and composition and can be sensitive to morphology throughout a multilayer structure. This new information on the kinetic processes is a powerful diagnostic tool for the crystal grower. Doping the epitaxial layers with low volatility organometallics, or in the case of As using the diluted hydride, has been demonstrated by a number of laboratories, but problems with memory doping from indium and incorporation/activation efficiencies for arsenic will be resolved by understanding the surface chemistry. Arsenic implanted double layer heterostructure diode results show comparable 80 K ROA values to LPE p/n diodes.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stuart J. C. Irvine "Recent developments in MOCVD of Hg1-xCdxTe", Proc. SPIE 1735, Infrared Detectors: State of the Art, (10 December 1992); https://doi.org/10.1117/12.138643
PROCEEDINGS
9 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Diffusion In Cadmium Mercury Telluride
Proceedings of SPIE (September 11 1989)
High Mobility LPE HgCdTe By Post Growth Indium Doping
Proceedings of SPIE (September 11 1989)
The Scope Of MOVPE For Advanced IR CMT Detectors
Proceedings of SPIE (September 11 1989)
Current status of the growth of HgCdTe by molecular beam...
Proceedings of SPIE (December 09 1992)
Recent progress in the doping of MBE HgCdTe
Proceedings of SPIE (August 31 1995)

Back to Top