Dry Etching With Ion Beam Milling

Edsel Overall

doi:10.1117/12.957189

17 July 1979 Dry Etching With Ion Beam Milling

Edsel Overall

Proceedings Volume 0174, Developments in Semiconductor Microlithography IV; (1979) https://doi.org/10.1117/12.957189
Event: Developments in Semiconductor Microlithography IV, 1979, San Jose, United States

Abstract

Ion beam milling combined with improved lithography will permit the etching of fine line circuits with controlled wall shapes in a wide variety of materials. This dry process has been used in the laboratory for several years and is now finding acceptance in the production of bubble memory devices and MOS circuitry. This paper will review the important characteristics of ion beam etching and comment on the state of the art in mass production equipment. The main difference between ion beam etching and conventional sputter etching is the use of a directed ion beam and a work chamber at a relatively low pressure. These differences produce four chief advantages. First, the low pressure results in less contamination and poisoning and, second, the directed beam permits control of the etching profile. Third, one can independently select the ion current, voltage, and pressure for reproducible results over a wide range of values. Fourth, the net charge of the positive ions can be balanced by low energy electrons, allowing the etching of any insulator or conductor. An organic or metal mask is utilized to pattern the material being etched. Typical removal rates in large batch processes range from 300 to 400 Å/min. Submicron soaced lines can be etched with either straight or sloped walls.

Citation Download Citation

Edsel Overall "Dry Etching With Ion Beam Milling", Proc. SPIE 0174, Developments in Semiconductor Microlithography IV, (17 July 1979); https://doi.org/10.1117/12.957189

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
3 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Etching

Ion beams

Ions

Semiconducting wafers

Photomasks

Lithography

Plasma etching

Show All Keywords

Keywords/Phrases

Search In:

Publication Years