13 January 1993 X-ray diode using a silicon field-emission photocathode
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We have produced arrays of 10,000 sharp p-type silicon points using an etch plus oxidation method. These points were used as electron emitters. No high vacuum caseation or high temperature cleaning was needed to observe the electron emission. These are seen to be photosensitive sources of electrons at 200 K and 300 K. They were also used to produce AlK(alpha ) x rays. This constitutes the first use of etched, point arrays for generating electrons for x-ray sources.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wael I. Karain, Wael I. Karain, Larry V. Knight, Larry V. Knight, David D. Allred, David D. Allred, Arturo Reyes-Mena, Arturo Reyes-Mena, } "X-ray diode using a silicon field-emission photocathode", Proc. SPIE 1741, Soft X-Ray Microscopy, (13 January 1993); doi: 10.1117/12.138731; https://doi.org/10.1117/12.138731

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