Optical properties and structural characteristics of semiconductor-doped oxide gels

Thierry Gacoin; Cyrille Train; Frederic Chaput; Jean-Pierre Boilot; Pascal Aubert; M. Gandais; Yangshu Wang; Andre Lecomte

doi:10.1117/12.132049

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7 December 1992 Optical properties and structural characteristics of semiconductor-doped oxide gels

Thierry Gacoin; Cyrille Train; Frederic Chaput; Jean-Pierre Boilot; Pascal Aubert; M. Gandais; Yangshu Wang; Andre Lecomte

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Proceedings Volume 1758, Sol-Gel Optics II; (1992) https://doi.org/10.1117/12.132049
Event: San Diego '92, 1992, San Diego, CA, United States

Abstract

CdS and PbS semiconductor nanoclusters (2 - 10 nm) are produced by using direct precipitation, (gamma) -radiolysis and reversed micelles. A chemical capping reaction is made at the cluster surface by thiolate complexes. The structure and the size of the capped clusters are determined by Optical Absorption, X-ray Diffraction, Small Angle X-ray Scattering and High Resolution Electron Microscopy. After grafting of a gel precursor at the cluster surface, PbS and CdS particles can be incorporated in optically clear and dense oxide gels prepared by hydrolysis of metal alkoxides in a wet atmosphere.

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Thierry Gacoin, Cyrille Train, Frederic Chaput, Jean-Pierre Boilot, Pascal Aubert, M. Gandais, Yangshu Wang, and Andre Lecomte "Optical properties and structural characteristics of semiconductor-doped oxide gels", Proc. SPIE 1758, Sol-Gel Optics II, (7 December 1992); https://doi.org/10.1117/12.132049

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