A process for selective seeding of conducting substrates (inolybdenun and copper) with submicron diamond particles has been studied. In this process, copper is electroplated through a photoresist mask, and the electroplating is performed in a stirred solution of CuSO4 and H2S04 into which O.l in size diamond particles have been added. This resulted in a continuous layer of diamond particles embedded in the electroplated copper. After the removal of photoresist, this layer has been used to seed further CVD (chemical vapor deposition) diamond growth selectively. Morphology and Raman analysis of both the as-plated copper/diamond matrix and the filir that resulted after further CVD diamond deposition have been reported.